Resistive Switching Property of Raw Organic Cow Milk for Memory Application

Organic material-based computer memory devices are critical for lowering the amount of electronic waste. Toward this end, we here present resistive switching property metal-insulator-metal type consisting active layers made raw organic cow milk. Our were up fat-free, medium cream, and full cream milk sandwiched between indium-doped tin oxide silver electrodes. These created without use heat or electricity, because they as their layers, do not pollute environment. The medium-fat film had a higher weight percentage metallic ions than fat-free full-cream films, according to energy-dispersive X-ray spectroscopy analysis layers. As result, electrical characterization studies revealed that conductive filaments driven by space-charge-limited conduction mechanism responsible “S-type” characteristics milk-based device, with at remarkably low VSET=+0.48V VRESET=−0.25V. Furthermore, over 30 write/erase cycles, device demonstrated better non-volatile prospects. Hoping conduction-driven filaments, on other hand, linked behavior Overall, our findings show fat ion content plays an important role in morphology, transport, these devices.